elektronische bauelemente SMBT882SS npn silicon epitaxial planar transistor 01-june-2002 rev. a page 1 of 3 rohs compliant product a suffix of ?-c? specifies halogen free description the SMBT882SS is a medium power low voltage transistor, designed for audio power amplifier, dc-dc converter and voltage regulator. features ? high current output up to 3a ? low saturation voltage package dimensions absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 30 v emitter to base voltage v ebo 5.0 v collector current i c 3.0 a total power dissipation pd 750 mw junction, storage temperature t j , t stg +150, -55 ~ +150 characteristics at ta = 25 c symbol min. typ. max. unit test conditions bvcbo 40 - - v i c =100ua, i e = 0 bvceo 30 - - v i c =1ma, i b =0 bvebo 5.0 - - v i e =10ua, i c =0 icbo - - 1.0 a v cb =30v, i e = 0 iebo - - 1.0 a v eb =3v, i c = 0 *vce(sat) - - 0.5 v i c =2a, i b =200ma *vbe(sat) - - 2.0 v i c =2a, i b =200ma *hfe1 30 - v ce =2v, i c =20ma *hfe2 100 - 500 v ce =2v, i c =1 a ft - 90 - mhz v ce =5v, i c =100ma, f=100mhz cob - 45 - pf v cb =10v, f=1mhz * pulse test: pulse width Q 380 s, duty cycle Q 2% classification of h fe2 rank q p e range 100 - 200 160 - 320 200 - 500 emitter dim min max a 2.70 3.10 b 1.30 1.70 c 1.00 1.30 d 0.35 0.50 g 1.90 ref. h 0.00 0.10 j 0.10 0.26 k 0.20 0.60 l 1.25 1.65 s 2.25 3.00 all dimension in mm sc-59 s g d b l a 1 3 2 top view h c j k base collector
elektronische bauelemente SMBT882SS npn silicon epitaxial planar transistor 01-june-2002 rev. a page 2 of 3 characteristics curve
elektronische bauelemente SMBT882SS npn silicon epitaxial planar transistor 01-june-2002 rev. a page 3 of 3 characteristics curve (cont?d)
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